The TP0610K-T1-GE3 is a P-Channel MOSFET from Vishay Intertechnology, designed for efficient switching and load management in compact circuit designs. With a maximum drain-source voltage of 60V and low on-resistance of 6Ω at Vgs -10V, this MOSFET is ideal for portable devices, power management circuits, and general-purpose switching in SMD applications.

1. P-Channel enhancement mode MOSFET
2. Low on-resistance (6Ω at Vgs = -10V) for efficient switching
3. Compact SOT-23 surface-mount package
4. Continuous drain current up to 185mA
5. Peak drain current up to 500mA
6. Power dissipation up to 350mW
7. RoHS compliant and environmentally friendly

• Type: P-Channel
• Drain-Source Voltage (Vds): -60V
• Continuous Drain Current (Id): -185mA
• Peak Drain Current (Idp): -500mA
• On-Resistance (RDS(on)): 6Ω @ Vgs = -10V
• Total Power Dissipation (Pd): 350mW
• Gate Threshold Voltage (Vgs(th)): -2V to -4V
• Package Type: SOT-23 â€?SMD
• Manufacturer: Vishay Intertech