The DMP2305U is a P-Channel enhancement mode MOSFET designed for high-efficiency switching and amplification in various electronic applications. It is encapsulated in a small SOT-23 surface-mount device (SMD) package, making it ideal for compact and high-density circuit designs.

Key Features:

1. Type: P-Channel Enhancement Mode
2. Package: SOT-23 (3-pin surface-mount package)
3. Maximum Voltage (VDS): -20V
4. Maximum Current (ID): -4.2A
5. Power Dissipation (Ptot): Typically 1.4W
6. Low On-Resistance (RDS(on)):
   • Typically 70 mΩ at VGS = -4.5V
   • Typically 100 mΩ at VGS = -2.5V
7. Fast Switching Speed: Suitable for high-speed applications
8. Gate Threshold Voltage (VGS(th)): Typically -0.7V

Electrical Characteristics:

• Drain-Source Voltage (VDS): -20V
• Gate-Source Voltage (VGS): ±12V
• Continuous Drain Current (ID): -4.2A
• Pulsed Drain Current (IDM): -16A
• Power Dissipation (Ptot): 1.4W
• On-Resistance (RDS(on)):
  • 70 mΩ at VGS = -4.5V
  • 100 mΩ at VGS = -2.5V
• Gate Charge (Qg): Typically 10nC

Package and Pin Configuration:

The DMP2305U MOSFET is housed in a compact SOT-23 package with three pins:

• Pin 1: Gate (G)
• Pin 2: Source (S)
• Pin 3: Drain (D

Note: Product images are for illustrative purposes only and may differ from the actual product.