The MMUN2233LT1G is a unique NPN transistor integrated with a monolithic bias resistor network, simplifying circuit design and reducing component count. It is housed in a compact SOT-23 surface-mount device (SMD) package, suitable for high-density circuit board layouts. Here is a detailed description of the product:

Key Features:

1. Type: NPN Bipolar Junction with Monolithic Bias Resistor Network

2. Package: SOT-23 (Surface Mount Device)

3. Polarity: NPN

4. Maximum Collector-Emitter Voltage (Vceo): 50V

5. Maximum Collector Current (Ic): 10mA

6. Monolithic Bias Resistor Network: Integrated resistors for easy biasing

7. Maximum Power Dissipation (Pd): 350mW

8. Operating Temperature Range: -55°C to +150°C

Applications:

• Switching Applications: Ideal for low-current switching applications.

• Signal Conditioning: Suitable for signal conditioning and interface applications.

• Digital Circuits: Commonly used in digital circuits requiring transistor logic level shifts and signal amplification.

Physical Dimensions:

• Length: Approximately 2.92mm

• Width: Approximately 1.3mm

• Height: Approximately 1.1mm

Pin Configuration:

• Pin 1 (Emitter): This is the emitter terminal, which is typically grounded in common-emitter configurations.

• Pin 2 (Base): The base terminal, used to control the transistor's switching and amplification.

• Pin 3 (Collector): The collector terminal, through which the main current flows when the transistor is in the 'on' state.

Note: Product images are for illustrative purposes only and may differ from the actual product.