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BC846BLT1G - 65V 100mA NPN Silicon Bipolar Transistor SOT-23 SMD Package

BC846BLT1G - 65V 100mA NPN Silicon Bipolar Transistor SOT-23 SMD Package

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The BC846BLT1G is a general-purpose NPN silicon bipolar junction (BJT) designed for low-power amplification and switching applications. It comes in a small SOT-23 surface-mount device (SMD) package, making it suitable for compact and high-density electronic designs.

Specifications:

  • Type: NPN Transistor

  • Collector-Emitter Voltage (Vce): 65V

  • Collector-Base Voltage (Vcbo): 80V

  • Emitter-Base Voltage (Vebo): 6V

  • Collector Current (Ic): 100mA

  • Power Dissipation (Ptot): 310mW

Pin Configuration:

  1. Emitter

  2. Base

  3. Collector

Key Characteristics:

  • DC Current Gain (hFE): Typically ranges from 110 to 800.

  • Transition Frequency (fT): 100MHz

  • Collector-Emitter Saturation Voltage (Vce(sat)): 250mV

  • Noise Figure: 4dB

Features:

  • High DC Current Gain

  • Low Saturation Voltage

  • High Transition Frequency

  • Suitable for surface-mount applications

  • Low Noise

Note: Product images are for illustrative purposes only and may differ from the actual product.

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