IGBT Modules FF300R12KS4 Infineon

Product: IGBT Silicon Modules    
Configuration:Dual    
Collector- Emitter Voltage VCEO Max:1.2 kV    
Collector-Emitter Saturation Voltage:3.2 V    
Continuous Collector Current at 25 C:370 A    
Gate-Emitter Leakage Current:400 nA    
Pd - Power Dissipation:1.95 kW    
Package / Case: 62 mm    
Minimum Operating Temperature: - 40 C    
Maximum Operating Temperature: + 125 C    
Packaging: Tray    
Brand:Infineon Technologies    
Country of Assembly: Not Available    
Country of Diffusion:Not Available    
Country of Origin:AT    
Maximum Gate Emitter Voltage:20 V    
Mounting Style: Screw Mount    
Product Type: IGBT Modules    
Series:  IGBT2 Fast    
Subcategory: IGBTs    
Technology:  Si    
Part # Aliases: SP000100774 FF300R12KS4HOSA1    
Unit Weight:12 oz