IRF3710STRL N-Channel MOSFET - D2PAK SMD Package

The IRF3710STRL is a powerful N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage, high-current switching applications. It is housed in a D2PAK surface-mount device (SMD) package, which is suitable for applications requiring efficient power handling. Here’s a detailed description of the product:

Key Features:

• Type: N-Channel
• Package: D2PAK (Surface Mount Device)
• Polarity: N-Channel
• Maximum Drain-Source Voltage (Vds): 100V
• Maximum Continuous Drain Current (Id): 57A
• Maximum Power Dissipation (Pd): 200W
• Low On-Resistance (Rds(on)): Typically 0.020Ω at Vgs = 10V
• Gate Threshold Voltage (Vgs(th)): 2V to 4V

Applications:

• Load Switching: Ideal for switching high-voltage loads.
• Power Management: Suitable for use in power management applications in industrial and automotive systems.
• Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
• DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.

Pin Configuration:

• Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
• Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
• Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
• Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.

Electrical Characteristics:

• Vds (Drain-Source Voltage): 100V max
• Vgs (Gate-Source Voltage): ±20V max
• Id (Continuous Drain Current): 57A max
• Ptot (Total Power Dissipation): 200W max
• Rds(on) (On-Resistance): 0.020Ω typical at Vgs = 10V
• Qg (Total Gate Charge): 160nC typical
• td(on) (Turn-On Delay Time): 20ns typical
• td(off) (Turn-Off Delay Time): 45ns typical

Note: Product images are for illustrative purposes only and may differ from the actual product.