IRF540 N-Channel MOSFET

A metal–oxide–semiconductor field-effect transistor (MOSFET) is a field-effect transistor where the voltage determines the conductivity of the device. It is used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. In N channel MOSFET the drain and source are heavily doped n+ regions and substrate in p type hence the current flows due to flow of negatively charged electrons. The IRF540N is an N-Channel MOSFET. This MOSFET can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with and other for logic switching. Speed control of motors and Light dimmers are also possible with this MOSFET since it has good switching characteristics.

Specifications

• Small signal N-Channel MOSFET
• Continuous Drain Current (ID) is 33A at 25°C
• Pulsed Drain Current (ID-peak) is 110A
• Minimum Gate threshold voltage (VGS-th) is 2V
• Maximum Gate threshold voltage (VGS-th) is 4V
• Gate-Source Voltage is (VGS) is ±20V
• Maximum Drain-Source Voltage (VDS) is 100V
• Available in TO220 package

Product Description

Package Content

1× IRF540 N Channel MOSFET